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Doping Effusion Cell DEZ |
Dual Doping Source DDS |
Phosphorus Doping Source DECO-D |
Silicon Doping Source SUSI-D |
Carbon Doping Source SUKO-D |
Electron Beam Boron Doping Source EBVV-B |
Select doping cell by dopant material:
Bulkmaterial | Dopant | Type | Source | Comment |
GaAs / AlGaAs | Si | n | DEZ | |
Si | n | SUSI-D | high mobility doping, fast switching | |
Te | n | DEZ | GaTe source material, T=700°C -> 1019cm-3 | |
Be | p | DEZ | ||
C | p | SUKO-D | high mobility p-type doping | |
Si / SiGe | Sb | n | DEZ | segregation effect |
As | n | DEZ | high segregation effect in MBE | |
P | n | DECO-D | GaP source material, T=700°C -> 1019cm-3 | |
B | p | HTS | ||
B | p | EBVV-B | extremely high Boron doping levels | |
Ga | p | DEZ | ||
Al | p | DEZ | segregates in MBE | |
Er | opt. | DEZ | used for light emission | |
GaN / GaInN | Si | n | DEZ | |
Si | n | SUSI | long filament lifetime / Si flux option | |
Mg | p | DEZ | ||
Zn | p | DEZ | high activation energy | |
GaP / GaAsP | S | n | OME, valved source | please contact us |
Te | n | DEZ | use GaTe as source material | |
Zn | p | DEZ | ||
SiC | N | n | plasma source | please contact us |
Al | p | DEZ | ||
ZnO | B | n | HTS | |
N | p | plasma source | please contact us | |
ZnSe | I | n | valved source | valved source / please contact us |
ZnCl2 | n | gas injector | valved source / please contact us | |
N | p | plasma source | please contact us | |
CdTe | Al | n | DEZ | |
Cu | p | DEZ | ||
Sb | p | DEZ | ||
Other | Fe | HTEZ | ||
Cr | HTEZ | |||
Cu | DEZ |