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State-of-the-art SiGe and other materials MBE system
Ideally suited for Si/SiGe epitaxial growth or metal deposition
Up to 10 source ports: 2 ports DN250CF (O.D. 12"), 8 ports DN63CF (O.D. 4.5") and DN100CF (O.D. 6")
Large capacity e-beam evaporators, wide range of effusion cells and gas sources
Substrate sizes 2", 3", 4" or multi-wafer size
Strong UHV pumping system (TSP, ion getter, cryo and/or turbo pump)
LN2 cooling shroud
In-situ characterization capability
Strong support by PhD MBE experts
The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with two electron beam evaporating guns and up to 8 effusion cells or gas injectors for deposition or surface treatment.
Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si and Ge MBE.
Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 500 EBV system and all essential components. Each product is assembled and carefully tested in-house.
The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.
Outstanding features of the OCTOPLUS 500 EBV are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 500 EBV comprises 10 radially arranged source ports, from which we recommend 8 ports to be used for effusion cells, sublimation sources or comparable components. Two large ports DN250CF are provided for e-beam evaporation guns. The e-beam evaporators can also be a multi-pocket version EBVM. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.
Additional load-lock or buffer chambers
Wafer transfer system
Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
Software / hardware control system
Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)
In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer
Additional requirements
Technical data |
|
Size of deposition chamber |
550 mm I.D. |
Base pressure |
< 5x10-11 mbar |
Pumping | TSP, ion getter pump, cryopump and/or turbopump |
Cooling Shroud | LN2 or other cooling liquid on request |
Substrate heater temperature | up to 800°C, 1000°C or 1400°C |
Substate size | up to 4" |
Bakeout temperature | up to 200°C |
Source ports | up to 8 ports DN63CF and DN100CF plus two DN250CF for e-beam evaporators |
Source types |
effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources |
Shutters |
soft-acting linear or rotary shutters |
In-situ monitoring | ion gauge, QCM, pyrometer, RHEED, QMA |
Sample transfer | linear transfer rod, manual or semi-automatic in face-down geometry |
Load lock | magazine with 8 substrates turbo-pumped |
MBE control software | Tusker |
Service | system installation and acceptance testing |
MBE training | by MBE experts |
Effusion Cells WEZ, NTEZ OME, HTEZ |
Sublimation Sources SUKO, SUSI HTS, DECO |
Valved Sources VACS, VGCS VCS, VSCS |
Plasma Sources |
E-Beam Evaporators EBVV |
|
III/V | Ga, In, Al | C, Si doping | As, P, Sb | ||
II/VI | Zn, Cd, Be | S, Se, Te | N-doping | ||
IV | Ge, Sn, Pb | B, P, Sb doping | Si, Ge | ||
GaN | Ga, In, Al | N | |||
Metals | Cu, Al, Ni, Co, ... | Pt, Ta, Pd, Mo, W | |||
Topological Insulators | Ge, Sn, Te, Bi, GeSb | Se, Te | B | ||
Graphene / Silicene | C, Si | ||||
Oxides | Fe, Ni, Mn, Bi, Eu, Ga, ... |
O | |||
Thin Film Solar Cells | Cu, Ga, In, Zn, NaF, Fe, Sn |
S, Se |
We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 EBV is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.