Individually designed refractory materials parts of highest quality and purity as well as standard pieces.
The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
The SUKO provides clean and stable flux at a low deposition rate of up to 2 Å/min. It has been successfully applied in a variety of research fields, e.g. graphene formation.
Safety system which protects UHV-chambers from contaminations caused by unexpected warming up of the cryopump.
Because of the large variety of different UHV systems each cluster is individually designed. If your requirements are more specialized than our standard Cluster Sources can provide, please contact us.
The Phosphorus Doping source DECO-D is an ultra pure source for P2, based on the decomposition of GaP.
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
The use of source clusters increases the capacity of your UHV-System, by using only a single port for two individual sources.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
The Electron Beam Evaporator EBV intends to achieve high growth rates for low vapour pressure materials, especially when high purity of the evaporant is desired.