Because of the large variety of different UHV systems each cluster is individually designed. If your requirements are more specialized than our standard Cluster Sources can provide, please contact us.
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
The Electron Beam Evaporator EBV intends to achieve high growth rates for low vapour pressure materials, especially when high purity of the evaporant is desired.
The Decomposition Source DECO is an ultra-pure source for P2 based on the decomposition of GaP. It is an affordable and easily operated alternative to valved phosphorus sources.
The High Temperature Source HTS allows evaporation of high vapor pressure materials, thereby combining very uniform material deposition with high flux rates.
The operation of any electron beam evaporator requires a well-matching set of power supplies and a control unit, in order to generate and guide the electron beam.
The Hydrogen Atom Beam Source HABS is a thermal gas cracker that produces an absolutely ion-free hydrogen gas beam, avoiding ion induced damage to the substrate.