The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
The Phosphorus Doping source DECO-D is an ultra pure source for P2, based on the decomposition of GaP.
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
Excellent growth of thin silicon layers, short period Si/Ge superlattices and Si/SiGe heterostructures by means of high purity intrinsic or highly doped Si filament.