Dopant-Cells

Carbon Doping Source SUKO-D
Carbon Doping Source
SUKO-D
The Carbon Doping Source SUKO-D is a highly optimized doping source for carbon p-type doping in III-V MBE.
Dopant Source DECO-D
Dopant Source
DECO-D
The Phosphorus Doping source DECO-D is an ultra pure source for P2, based on the decomposition of GaP.
Doping Effusion Cell DEZ
Doping Effusion Cell
DEZ
Our effusion cells for doping applications are generally designed for elemental and compound evaporation or sublimation in the temperature range from 200°C to 1400°C.
Dual Doping Source DDS
Dual Doping Source
DDS
Cluster sources with two crucibles, individual cell shutters and water cooling shield on a single flange increase MBE capabilities into your UHV chamber.
E-Beam Boron Doping Source EBVV-B
E-Beam Boron Doping Source
EBVV-B
EBVV-B is a vertical e-beam evaporator that offers evaporation of elemental Boron or Si-B alloy on DN63CF (O.D. 4.5") flange with 4 cm³ crucible capacity.
Silicon Sublimation Doping Source SUSI-D
Silicon Sublimation Doping Source
SUSI-D
Excellent growth of thin silicon layers, short period Si/Ge superlattices and Si/SiGe heterostructures by means of high purity intrinsic or highly doped Si filament.