- Oxygen resistance option of the SH substrate manipulator
- Substrate temperatures up to 700°C with Ni-alloy heater; up to 900°C with noble-metal-alloy heater up to 900°C with SiC heater depending on oxygen partial pressure
- Pressure range from UHV up few mbar oxygen
- Water cooled ceramic bearings for continuous rotation
- Substrate sizes up to 6 inch
Introduction
MBE-Komponenten GmbH offers ovens, deposition stations or heated
stations which are resistant to oxygen or other reactive gas atmosphere.
The oxygen resistant option is indicated by the affix “-O”.
Selected shielding and construction materials are used for high
temperature applications in oxygen rich environments. Maximum substrate
temperatures of 700°C are possible using Ni-alloy heaters.
Noble-metal-alloy heaters and SiC heaters work for even higher substrate
temperatures of up to 900°C or in some cases even 1000°C depending on
the oxygen partial pressures during operation.
Due to the wide range of different applications and processes in oxygen rich environments a general recommendation of heater and construction materials is difficult. Please contact our specialists for more detailed recommendations to your specific application.
The specifications and options for the SH-O substrate manipulators are almost the same as for our SH models. They are:
- sample size up to 6"
- continuous substrate rotation
- water cooled ceramic bearings
- linear travel for substrate transfer
- thermocouple: Type K Chromel/Alumel (types R or S on request)
- integrated main shutter
- mask retainer
Application
SH-O substrate manipulators are used in oxygen rich environments (up to several mbar) or reactive gas atmosphere.
Attention:
Special care must be taken when compounds are operated at high
temperature and high pressure. In case of pressures above 10
-4 mbar the thermal conductivity of
gases has significant effects to heat transfer from heater to sample. It
is strongly recommended to contact our specialists when planning your
application.
| Heater type | Ni-alloy wire ( Ni ) or noble-metal-alloy wire ( Pt ), or SiC heater (S) |
| Thermocouple | Chromel/Alumel (type K); (others on request) |
| Wafer temperature | max. 700°C with Ni-alloy heater, max. 900°C with noble-metal-alloy and SiC heater |
| Bakeout temperature | 250°C |
| Electrical contacts | copper-free contacts for metal heater |
| Linear travel | 25 mm standard, 30-50 mm on request |
| Options | integrated main shutter ( S ), electrically insulated wafer holder with additional feedthrough for bias voltage ( B ), tantalum wafer holder ( T ) |
Dimensions
Specific data
For general information on CF mounting flanges see Flange and Gasketdimensions .
