10x10mm² substrate, max. 6 ports
10x10mm² substrate max. 9 ports
up to 2-inch substrate, max. 8 ports
3-inch substrate, max. 12 ports
up to 6-inch substrate, max. 12 ports
up to 8-inch substrate, max. 12 ports
OCTOPLUS-O for Oxides
Thermal evaporation up to 2000°C
Deposition by powerful electron beam
Sample manipulators and wafer heaters
Evaporation with enhanced flux control
Sources for p- and n-type doping
Thermal and plasma gas crackers
Evaporators for R&D and industry
Evaporators for volatile molecules
Multiple crucibles on a single flange
Bayard-Alpert type ionization gauges
Bakeable power and TC extension lines
Water and LN2 cooled adapters
Overview of crucible shapes and sizes
Annealing oven for 10x10mm² samples
Rotary and linear shutter equipment
SiGe and compound semiconductor devices
Explore new and exotic electronic states
Quantum-dots/-wires, roll-up-/nano-tubes
CIGS, CZTS and CdTe applications
Magnetic material devices
Single layers of atoms or molecules
Metallization of substrates by PVD
Electronics based on organic molecules
Superconductors and high-k dielectrics
Materials with conducitve surface states
Contact our support team
Simulation for flux and uniformity
In case of technical problems
Schematic drawings and dimensions
Dimensioning of required power supplies
Dr. Eberl MBE-Komponenten GmbH
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List of upcoming conferences
Customer References, Solutions & Patents
Terms simply explained
Terms and Conditions - AGB
Headquarters and Representatives
Select on Periodic Table
Select by Vapor Pressure Data
Select by Element and Compound
Crucibles used in our MBE sources
Information about how to request
HTSEBVHTEZ-W
vapor pressure is approximated for the shown pressure range according to P[mbar]=10(A-B/T[K])
