vapor pressure is approximated for the shown pressure range according to P[mbar]=10(A-B/T[K])
10x10 mm² substrate, max. 6 ports
10x10 mm² substrate max. 9 ports
up to 2-inch substrate, max. 8 ports
up to 4-inch substrate, max. 12 ports
up to 6-inch substrate, max. 12 ports
up to 8-inch substrate, max. 12 ports
OCTOPLUS-O for Oxides
Thermal evaporation up to 2000°C
Deposition by powerful electron beam
Sample manipulators and wafer heaters
Evaporation with enhanced flux control
Sources for p- and n-type doping
Thermal and plasma gas crackers
Evaporators for R&D and industry
Evaporators for volatile molecules
Multiple crucibles on a single flange
Annealing oven for 10x10mm² samples
Bayard-Alpert type ionization gauges
Quartz Crystal Monitor
Water and LN2 cooled adapters
Overview of crucible shapes and sizes
Electronic control equipment
Rotary and linear shutter equipment
SiGe and compound semiconductor devices
Explore new and exotic electronic states
Quantum-dots/-wires, roll-up-/nano-tubes
CIGS, CZTS and CdTe applications
Magnetic material devices
Single layers of atoms or molecules
Metallization of substrates by PVD
Electronics based on organic molecules
Superconductors and high-k dielectrics
Materials with conducitve surface states
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vapor pressure is approximated for the shown pressure range according to P[mbar]=10(A-B/T[K])