III/V, II/VI and other materials MBE system
- State-of-the-art MBE system for research and production processes
- Applications: III/V, II/VI and other heterostructures
- 12 source ports
- Wide range of source options, e.g. effusion cells, gas sources, manipulators
- Substrate sizes 2", 3" or 4"; face-down wafer geometry
- Strong UHV pumping system with base pressure < 5 x 10-11 mbar
- Optimized deposition geometry to achieve both high materials usage for long growth campaigns and layer homogeneity on full 4” substrates
- LN2 cooling shroud
- In-situ characterization capability
- Professional support by PhD MBE experts
The OCTOPLUS 500 system was developed for the growth of high quality III-V heterostructures on 4 inch Si substrates. Optionally, the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with up to 12 effusion cells or gas injectors for deposition or surface treatment.
The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
Outstanding features of the OCTOPLUS 500 are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 500 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.
The OCTOPLUS 500 is available with an EBV option to replace some of the effusion cell flanges and instead mount horizontal electron beam evaporators.
With this option the OCTOPLUS 500 can be used as a dedicated Si-Ge MBE with two horizontal 100 cm³ EBV sources.
At Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si and Ge MBE and are happy to discuss such an application in further detail with you.
A version with one horizontally mounted 6-pocket electron beam evaporator allows working with layers containing high temperature materials such as e.g. W, Ta, Nb, Mo, Pt. This can be used for metallization, growth of superconductors or even transition metal dichalcogenides.
Options for OCTOPLUS 500
- Additional load-lock or buffer chambers
- Wafer transfer system (linear trolley type or central transfer wafer handler)
- Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
- Software/hardware control system
- Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)
- In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer
- Customization to additional process requirements
- Two-stage phosphorus recovery system using a GaP compound or white phosphorus cracker source
Technical Data
| Size of deposition chamber | 550 mm I.D. |
| Base pressure | < 5x10-11 mbar |
| Pumping | TSP, ion getter pump, cryopump and/or turbopump |
| Cooling Shroud | LN2 or other cooling liquid on request |
| Substrate heater temperature | up to 800°C, 1000°C or 1400°C |
| Substate size | up to 4" |
| Bakeout temperature | up to 200°C |
| Source ports | 6x DN63CF + 6x DN100CF or EBV + 4x DN63CF + 5x DN100CF or 2x EBV + 4x DN63CF + 4x DN100CF |
| Source types | effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources |
| Shutters | soft-acting linear or rotary shutters |
| In-situ monitoring | ion gauge, QCM, pyrometer, RHEED, QMA |
| Sample transfer | linear transfer rod, manual or semi-automatic in face-down geometry |
| Load lock | magazine with 6 or more substrates turbo-pumped |
| MBE control software | Tiny Tusker |
| Service | system installation and acceptance testing |
| MBE training | by MBE experts |
Examples for applications and corresponding sources
| Effusion Cells WEZ , NTEZ OME , HTEZ | Sublimation Sources SUKO , SUSI HTS , DECO | Valved Sources VACS , VGCS VCS , VSCS | Plasma Sources FMP | E-Beam Evaporators EBVV | |
| III/V | Ga, In, Al | C, Si doping | As, P, Sb | ||
| II/VI | Zn, Cd, Be | S, Se, Te | N-doping | ||
| IV | Ge, Sn, Pb | B, P, Sb doping | Si, Ge | ||
| GaN | Ga, In, Al | N | |||
| Metals | Cu, Al, Ni, Co, ... | Pt, Ta, Pd, Mo, W | |||
| Topological Insulators | Ge, Sn, Te, Bi, GeSb | Se, Te | B | ||
| Graphene / Silicene | C, Si | ||||
| Oxides | Fe, Ni, Mn, Bi, Eu, Ga, ... | O | |||
| Thin Film Solar Cells | Cu, Ga, In, Zn, NaF, Fe, Sn | S, Se |
Based on many years of active research experience in the field of growth and doping applications our team develops and manufactures the OCTOPLUS 500 system and all essential components. Each product is assembled and carefully tested in-house.
We are happy to discuss your MBE system specifications and give
competent advice for your application.
The OCTOPLUS 500 is in use in leading laboratories. On demand we
transmit a detailed list of references. Please
contact our sales
department for further questions and specification information.
